PVTIME – In an exciting development for the global PV industry, Gstar is making significant progress with its Indonesian manufacturing base. The first shipment of key equipment, including single crystal growth furnaces and associated control systems, has been shipped. This shipment is an important milestone as it paves the way for the establishment of a smart manufacturing facility capable of producing 3GW of mono-crystalline silicon rods and 3GW of silicon wafers per year. The project has now entered the crucial equipment installation phase.
The single crystal growth furnaces being shipped to Indonesia are state of the art, using the world leading Czochralski (CZ) crystal growth method. Equipped with a state-of-the-art automatic control system, these furnaces can meticulously control critical factors such as temperature gradients, pulling rates and rotation speeds during the crystal growth process. This precision ensures that the silicon crystals form with a specific crystal orientation, resulting in high quality monocrystalline silicon ingots with low dislocation density and excellent consistency.
Anticipation is high as the production facility is due to start trial production in May this year. Once operational, it will have an annual capacity of 3GW for mono-crystalline pulling and 3GW for wafer slicing. Gstar plans to phase in a total of 120 mono-crystalline silicon ingot furnaces and other advanced equipment at the Indonesian site. The first batch has already been shipped. The site, which prides itself on its digital and intelligent manufacturing processes, will be dedicated to the production of monocrystalline silicon ingots and large format 182mm and 210mm monocrystalline silicon wafers.
Looking at Gstar’s wider footprint in South East Asia, the company has already achieved successful start-ups with its cell factory in Thailand and its aluminium frame and module factories.
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